• Product Model BY25Q128ESSIG(R)
  • Brand BYTe Semiconductor
  • RoHS Yes
  • Description 128 MBIT, 3.0V (2.7V TO 3.6V), -
  • Categories Memoria
  • PDF PDF
  • In Stock 5490

Technical Details

  • Package / Case 8-SOIC (0.209", 5.30mm Width)
  • Mounting Type Surface Mount
  • Memory Size 128Mbit
  • Memory Type Non-Volatile
  • Operating Temperature -40°C ~ 85°C (TA)
  • Voltage - Supply 2.7V ~ 3.6V
  • Technology FLASH - NOR (SLC)
  • Clock Frequency 120 MHz
  • Memory Format FLASH
  • Supplier Device Package 8-SOP
  • Write Cycle Time - Word, Page 60µs, 2.4ms
  • Memory Interface SPI - Quad I/O
  • Access Time 7.5 ns
  • Memory Organization 16M x 8
  • HTSUS 8542.32.0071
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


32 MBIT, 3.0V (2.7V TO 3.6V), -4

In Stock: 5318

IC FLASH 128MBIT SPI/QUAD 8SOIC

In Stock: 87872

Top