- 产品型号 BQ4011YMA-100
- 品牌 Texas Instruments
- RoHS Yes
- 描述 IC NVSRAM 256KBIT PARALLEL 28DIP
- 分类 记忆
-
PDF
- 库存 1500
技术参数
- Package / Case 28-DIP Module (0.61", 15.49mm)
- Mounting Type Through Hole
- Memory Size 256Kbit
- Memory Type Non-Volatile
- Operating Temperature 0°C ~ 70°C (TA)
- Voltage - Supply 4.5V ~ 5.5V
- Technology NVSRAM (Non-Volatile SRAM)
- Memory Format NVSRAM
- Supplier Device Package 28-DIP Module (18.42x37.72)
- Write Cycle Time - Word, Page 100ns
- Memory Interface Parallel
- Access Time 100 ns
- Memory Organization 32K x 8
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0041
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
